Analysis of Photocurrent and Quantum Efficiency of Pin Bulk Cmos and Pin Soi Cmos Photodiodes

The photodiodes are the most important devices in an image sensor. Their answer depends on several factors, such as wavelength, the refraction index of materials, the width of the depletion region, the substrate doping and device dimensions. In this article, the responses of the BULK PIN photodiode and SOI PIN photodiode are compared. Through the comparison among the photogenerated current of the devices, it was possible to conclude that the quantum efficiency is dependent on the incident wavelength, the dark current, the recombination effect, the photosensitive area, and the reflections. An analysis of the effects produced by the change of the incident power intensity was done either.